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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3366
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3366 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook computers.
FEATURES
* Low on-resistance RDS(on)1 = 21 m (MAX.) (VGS = 10 V, ID = 10 A) RDS(on)2 = 33 m (MAX.) (VGS = 4.5 V, ID = 10 A) RDS(on)3 = 43 m (MAX.) (VGS = 4.0 V, ID = 10 A) * Low Ciss : Ciss = 730 pF (TYP.) * Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER 2SK3366 2SK3366-Z PACKAGE TO-251 TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (Pulse)
Note
VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg
30 20 20 80 30 1.0 150 -55 to + 150
V V A A W W C C
Total Power Dissipation (TC = 25 C) Total Power Dissipation (TA = 25 C) Channel Temperature Storage Temperature Note PW 10 s, Duty cycle 1 %
THERMAL RESISTANCE
Channel to case Channel to ambient Rth(ch-C) Rth(ch-A) 4.17 125 C/W C/W
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D14256EJ1V0DS00 (1st edition) Date Published August 1999 NS CP(K) Printed in Japan
(c)
1999
2SK3366
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 RDS(on)3 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr IF = 20 A, VGS = 0 V IF = 20 A, VGS = 0 V di/dt = 100 A/s ID = 20 A, VDD = 24 V, VGS = 10 V ID = 10 A, VGS(on) = 10 V, VDD = 15 V, RG = 10 TEST CONDITIONS VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 10 A VGS = 4.0 V, ID = 10 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 10 A VDS = 30 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, VGS = 0 V, f = 1 MHz 730 250 120 28 420 47 64 15 2.8 4.1 1.0 30 26 1.5 5 MIN. TYP. 17.2 26 33 2.0 10 10 10 MAX. 21 33 43 2.5 UNIT m m m V S
A A
pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 SWITCHING TIME
D.U.T. RL
VGS VGS
Wave Form
TEST CIRCUIT 2 GATE CHARGE
D.U.T. IG = 2 mA PG.
90 % 90 % ID
PG.
RG RG = 10
0 ID
10 %
VGS (on)
90 %
RL VDD
VDD
50
VGS 0 t
t = 1 s Duty Cycle 1 %
ID
Wave Form
0
10 % td (on) ton tr td (off) toff
10 % tf
2
Data Sheet D14256EJ1V0DS00
2SK3366
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 35
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
100 80 60 40 20
30 25 20 15 10 5 0 20 40 60 80 100 120 140 160
0
20
40
60
80
100 120 140 160
TC - Case Temperature - C
TC - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA 100
S( ) on
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 80 VGS =10 V Pulsed
Li
ID - Drain Current - A
1m
ID - Drain Current - A
RD t VG (a ID(DC) =20 A
d ite m V) 0 =1 S
ID(PULSE) = 80 A
PW
=1
s
00
s
10
Po
60 4.5 V 40
we
rD
10
iss ipa tio
ms
nL im
ite
d
1.0
20
4.0 V
0.1
TC = 25C Single Pulse
1.0
10
100
0
1
2
3
4
VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS 100
Pulsed
ID - Drain Current - A
10
1
TA = 150C 75C 25C -25C -50C
0.1
0.01
0.001 0
1
2
3
4
5
6
VGS - Gate to Source Voltage - V
Data Sheet D14256EJ1V0DS00
3
2SK3366
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000
rth(t) - Transient Thermal Resistance - C/W
Rth(ch-A) = 125 C/W 100
10 Rth(ch-C) = 4.17 C/W
1
Single Pulse 0.1 100 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
RDS(on) - Drain to Source On-state Resistance - m
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 50 Pulsed 40
| yfs | - Forward Transfer Admittance - S
10
Tch = -50C -25C 25C 75C 150C
VDS = 10 V Pulsed
30 20 ID = 10 A
1
10
0.1 0.1
1
10
100
0
5
10
15
ID- Drain Current - A
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - m
VGS(off) - Gate to Source Cut-off Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 3 2.5 2 1.5 1 0.5 0 VDS = 10 V ID = 1 mA
Pulsed
80 60 VGS = 4.0 V 4.5 V
40 10 V 20 0 0.1
1
10
100
- 50
0
50
100
150
ID - Drain Current - A
Tch - Channel Temperature - C
4
Data Sheet D14256EJ1V0DS00
2SK3366
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 50
ISD - Diode Forward Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 VGS = 10 V
VGS = 4.0 V 40 4.5 V
4.5 V 10
30 10 V 20
0V 1
10 0 ID = 10 A - 50 0 50 100 150
0.1 Pulsed 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD - Source to Drain Voltage - V
Tch - Channel Temperature - C
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000
SWITCHING CHARACTERISTICS 10000
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
VGS = 0 V f = 1 MHz
tr 1000 tf 100 td(on) td(off)
1000 Ciss
Coss 100 Crss
10
VDD = 15 V VGS = 10 V RG = 10
10 0.01
0.1
1
10
100
1 0.1
VDS - Drain to Source Voltage - V
1 10 ID - Drain Current - A
100
REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000
trr - Reverse Recovery Time - ns
VDS - Drain to Source Voltage - V
30 VDD = 24 V 15 V 6V
12 10 8 VGS 6 4 VDS 2 10 15 20 0
100
20
10
10
1 0.1
1
10
100
0
5
IF - Diode Current - A
QG - Gate Charge - nC
VGS - Gate to Source Voltage - V
di/dt = 100 A/s VGS = 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 40 ID = 20 A 14
Data Sheet D14256EJ1V0DS00
5
2SK3366
PACKAGE DRAWINGS (Unit : mm)
1) TO-251 (MP-3) 2) TO-252 (MP-3Z)
1.5-0.1
+0.2
6.50.2 5.00.2 4
2.30.2 0.50.1
0.8 4.3 MAX.
6.50.2 5.00.2 4
1.5-0.1
+0.2
2.30.2 0.50.1
1.60.2
5.50.2
1
2
3
13.7 MIN.
7.0 MAX.
1
2
3
1.10.2
+0.2
0.5-0.1
2.3 2.3
0.5-0.1
1.Gate 2.Drain 3.Source 4.Fin (Drain)
+0.2
0.9 0.8 2.3 2.3 MAX. MAX. 0.8 1. Gate 2. Drain 3. Source 4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
0.75
Gate
Body Diode
Gate Protection Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
6
Data Sheet D14256EJ1V0DS00
0.7
1.10.2
2.0 MIN.
5.50.2 10.0 MAX.
1.0 MIN. 1.8 TYP.
2SK3366
[MEMO]
Data Sheet D14256EJ1V0DS00
7
2SK3366
[MEMO]
* The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.
M7 98. 8

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